Static random-access memory

Static random-access memory (SRAM) is a type of semiconductor memory where the word static indicates that, unlike dynamic RAM (DRAM), it does not need to be periodically refreshed, as SRAM uses bistable latching circuitry to store each bit. SRAM exhibits data remanence, but is still volatile in the conventional sense that data is eventually lost when the memory is not powered.


Each bit in an SRAM is stored on four transistors that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access transistors serve to control the access to a storage cell during read and write operations. A typical SRAM uses six MOSFETs to store each memory bit. In addition to such 6T SRAM, other kinds of SRAM chips use 8T, 10T, or more transistors per bit. This is sometimes used to implement more than one (read and/or write) port, which may be useful in certain types of video memory and register files implemented with multi-ported SRAM circuitry.
Generally, the fewer transistors needed per cell, the smaller each cell can be. Since the cost of processing a silicon wafer is relatively fixed, using smaller cells and so packing more bits on one wafer reduces the cost per bit of memory.
Memory cells that use fewer than 6 transistors are possible — but such 3T or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM).
Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M5 and M6 which, in turn, control whether the cell should be connected to the bit lines: BL and BL. They are used to transfer data for both read and write operations. Although it is not strictly necessary to have two bit lines, both the signal and its inverse are typically provided in order to improve noise margins.
During read accesses, the bit lines are actively driven high and low by the inverters in the SRAM cell. This improves SRAM bandwidth compared to DRAMs—in a DRAM, the bit line is connected to storage capacitors and charge sharing causes the bitline to swing upwards or downwards. The symmetric structure of SRAMs also allows for differential signaling, which makes small voltage swings more easily detectable. Another difference with DRAM that contributes to making SRAM faster is that commercial chips accept all address bits at a time. By comparison, commodity DRAMs have the address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in order to keep their size and cost down.